IRS2008MPBFAUMA1
Infineon Technologies
Infineon Technologies
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Enhance your electronic designs with Infineon Technologies's IRS2008MPBFAUMA1 Gate Drivers, engineered for superior performance in demanding environments. These ICs boast features such as low EMI, high efficiency, and robust thermal management, making them ideal for automotive, aerospace, and medical devices. Infineon Technologies is committed to delivering innovative solutions that meet your exact requirements. Don't hesitate request a sample or quotation today!
Specifications
- Product Status: Active
- Driven Configuration: Half-Bridge
- Channel Type: Synchronous
- Number of Drivers: 1
- Gate Type: IGBT, N-Channel MOSFET
- Voltage - Supply: 10V ~ 20V
- Logic Voltage - VIL, VIH: 0.8V, 2.5V
- Current - Peak Output (Source, Sink): 290mA, 600mA
- Input Type: CMOS
- High Side Voltage - Max (Bootstrap): 200 V
- Rise / Fall Time (Typ): 70ns, 30ns
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 14-VFQFN Exposed Pad
- Supplier Device Package: 14-MLPQ (4x4)
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