IRL620STRR
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 200V 5.2A D2PAK
$0.00
Available to order
Reference Price (USD)
800+
$1.18184
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose IRL620STRR by Vishay Siliconix. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with IRL620STRR inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Rds On (Max) @ Id, Vgs: 800mOhm @ 3.1A, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 5 V
- Vgs (Max): ±10V
- Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 3.1W (Ta), 50W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D²PAK (TO-263)
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Related Products
onsemi
NVMFS6B05NWFT3G
Vishay Siliconix
SIHS36N50D-E3
STMicroelectronics
STP5N62K3
onsemi
IRLW510ATM
Infineon Technologies
IRL2505STRRPBF
Fairchild Semiconductor
FDB8878
IXYS
IXTA80N10T7
Renesas Electronics America Inc
2SJ546-E
Infineon Technologies
IPD03N03LB G
onsemi