IRL530NPBF
Infineon Technologies
Infineon Technologies
MOSFET N-CH 100V 17A TO220AB
$0.68
Available to order
Reference Price (USD)
1+
$1.22000
10+
$1.08000
100+
$0.86550
500+
$0.68400
1,000+
$0.55200
Exquisite packaging
Discount
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IRL530NPBF by Infineon Technologies is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, IRL530NPBF ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Last Time Buy
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Rds On (Max) @ Id, Vgs: 100mOhm @ 9A, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 5 V
- Vgs (Max): ±16V
- Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 79W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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