IRL40B212
Infineon Technologies
Infineon Technologies
MOSFET N-CH 40V 195A TO220AB
$3.48
Available to order
Reference Price (USD)
1+
$3.36000
10+
$2.99800
100+
$2.45800
500+
$1.99034
1,000+
$1.67860
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience the power of IRL40B212, a premium Transistors - FETs, MOSFETs - Single from Infineon Technologies. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, IRL40B212 is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Last Time Buy
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 150µA
- Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 4.5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 8320 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 231W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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