IRG8P25N120KDPBF
Infineon Technologies
Infineon Technologies
IGBT 1200V 40A 180W TO-247AC
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Choose IRG8P25N120KDPBF Single IGBTs by Infineon Technologies for superior power handling in demanding environments. From railway systems to industrial drives, these transistors excel with features like avalanche ruggedness and integrated diodes. Their modular design simplifies installation and maintenance. Infineon Technologies's reputation for quality makes IRG8P25N120KDPBF a smart investment. Email us now for datasheets and volume discounts!
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 40 A
- Current - Collector Pulsed (Icm): 45 A
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A
- Power - Max: 180 W
- Switching Energy: 800µJ (on), 900µJ (off)
- Input Type: Standard
- Gate Charge: 135 nC
- Td (on/off) @ 25°C: 20ns/170ns
- Test Condition: 600V, 15A, 10Ohm, 15V
- Reverse Recovery Time (trr): 70 ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AC
Related Products
Infineon Technologies
IRGP6660DPBF
IXYS
IXSR50N60B
onsemi
FGB30N6S2D
Infineon Technologies
IRGSL14C40LPBF
Microchip Technology
APT30GS60BRDQ2G
IXYS
IXSK50N60AU1
IXYS
IXGP16N60C2D1
Infineon Technologies
IKP01N120H2XKSA1
STMicroelectronics
STGB7NB60HDT4
IXYS