IRG8CH10K10F
Infineon Technologies
Infineon Technologies
IGBT 1200V 5A DIE
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Discover high-performance IRG8CH10K10F Single IGBTs from Infineon Technologies, designed for efficient power management in various industrial applications. These transistors offer superior switching capabilities and thermal performance, making them ideal for motor drives, renewable energy systems, and power supplies. Features include low saturation voltage, high current capacity, and robust construction. Whether you're upgrading existing systems or designing new solutions, IRG8CH10K10F ensures reliability and efficiency. Contact us today for pricing and technical support!
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): -
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 5A
- Power - Max: -
- Switching Energy: -
- Input Type: Standard
- Gate Charge: 30 nC
- Td (on/off) @ 25°C: 20ns/160ns
- Test Condition: 600V, 5A, 47Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
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