IRG8B08N120KDPBF
Infineon Technologies
Infineon Technologies
DIODE 1200V 8A TO-220
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Maximize energy efficiency with IRG8B08N120KDPBF Single IGBTs by Infineon Technologies, a trusted name in discrete semiconductors. Suitable for solar inverters, motor controllers, and more, these transistors feature low conduction loss and high switching frequency. Their robust design ensures long-term performance even in harsh environments. Choose IRG8B08N120KDPBF for your next project and experience the Infineon Technologies difference. Submit your inquiry today for expert assistance!
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 15 A
- Current - Collector Pulsed (Icm): 15 A
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 5A
- Power - Max: 89 W
- Switching Energy: 300µJ (on), 300µJ (off)
- Input Type: Standard
- Gate Charge: 45 nC
- Td (on/off) @ 25°C: 20ns/160ns
- Test Condition: 600V, 5A, 47Ohm, 15V
- Reverse Recovery Time (trr): 50 ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
Related Products
onsemi
NGTB40N65IHRWG
STMicroelectronics
STGP35N35LZ
IXYS
IXSH35N120B
Infineon Technologies
IRGB14C40LPBF
IXYS
IXGR60N60U1
Renesas Electronics America Inc
RJH60V3BDPE-00#J3
IXYS
IXGT24N170AH1
IXYS
IXGH60N60B2
STMicroelectronics
STGD10NC60KT4
Infineon Technologies