IRG7PH30K10PBF
Infineon Technologies
Infineon Technologies
IGBT 1200V 33A 210W TO247AC
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Choose IRG7PH30K10PBF Single IGBTs by Infineon Technologies for superior power handling in demanding environments. From railway systems to industrial drives, these transistors excel with features like avalanche ruggedness and integrated diodes. Their modular design simplifies installation and maintenance. Infineon Technologies's reputation for quality makes IRG7PH30K10PBF a smart investment. Email us now for datasheets and volume discounts!
Specifications
- Product Status: Obsolete
- IGBT Type: Trench
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 33 A
- Current - Collector Pulsed (Icm): 27 A
- Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 9A
- Power - Max: 210 W
- Switching Energy: 530µJ (on), 380µJ (off)
- Input Type: Standard
- Gate Charge: 45 nC
- Td (on/off) @ 25°C: 14ns/110ns
- Test Condition: 600V, 9A, 22Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AC
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