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IRFU3410PBF

Infineon Technologies
IRFU3410PBF Preview
Infineon Technologies
MOSFET N-CH 100V 31A IPAK
$1.19
Available to order
Reference Price (USD)
1+
$1.11000
10+
$0.98000
100+
$0.77480
500+
$0.60088
1,000+
$0.47438
Exquisite packaging
Discount
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Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 39mOhm @ 18A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1690 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 3W (Ta), 110W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: IPAK (TO-251AA)
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA

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