IRFS59N10DPBF
Infineon Technologies
Infineon Technologies
MOSFET N-CH 100V 59A D2PAK
$0.00
Available to order
Reference Price (USD)
1+
$4.18000
10+
$3.76200
100+
$3.12700
500+
$2.57652
1,000+
$2.20951
Exquisite packaging
Discount
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Discover high-performance IRFS59N10DPBF from Infineon Technologies, a leading solution in the Discrete Semiconductor Products category. Our Transistors - FETs, MOSFETs - Single are designed for efficiency and reliability, making them ideal for various electronic applications. These components feature low on-resistance, fast switching speeds, and excellent thermal performance, ensuring optimal functionality in power management and amplification circuits. Commonly used in automotive, industrial, and consumer electronics, IRFS59N10DPBF delivers consistent performance under demanding conditions. Interested in learning more? Contact us today for a detailed quote and technical support!
Specifications
- Product Status: Discontinued at Digi-Key
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 25mOhm @ 35.4A, 10V
- Vgs(th) (Max) @ Id: 5.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 2450 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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