IRFIBF20GPBF
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 900V 1.2A TO220-3
$1.65
Available to order
Reference Price (USD)
1+
$3.49000
50+
$2.83100
100+
$2.55770
500+
$2.01144
1,000+
$1.68364
2,500+
$1.57438
5,000+
$1.51975
Exquisite packaging
Discount
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Optimize your electronic systems with IRFIBF20GPBF, a high-quality Transistors - FETs, MOSFETs - Single from Vishay Siliconix. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, IRFIBF20GPBF provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 900 V
- Current - Continuous Drain (Id) @ 25°C: 1.2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 8Ohm @ 720mA, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 30W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3 Full Pack, Isolated Tab
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