IRFH8324TRPBF
Infineon Technologies
Infineon Technologies
MOSFET N-CH 30V 23A/90A PQFN
$1.03
Available to order
Reference Price (USD)
1+
$1.03000
500+
$1.0197
1000+
$1.0094
1500+
$0.9991
2000+
$0.9888
2500+
$0.9785
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
IRFH8324TRPBF by Infineon Technologies is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, IRFH8324TRPBF ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 90A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 4.1mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2.35V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2380 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 3.6W (Ta), 54W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PQFN (5x6)
- Package / Case: 8-PowerTDFN
Related Products
STMicroelectronics
STB2N62K3
Vishay Siliconix
SI4835DDY-T1-E3
Nexperia USA Inc.
PHB33NQ20T,118
IXYS
IXTN200N10L2
onsemi
FQD30N06TM
Renesas Electronics America Inc
2SJ451ZK-TL-E
onsemi
FDD120AN15A0-F085
Diodes Incorporated
DMN2450UFB4-7R
Infineon Technologies
BSZ0902NSIATMA1
NTE Electronics, Inc