IRFB5615PBF
Infineon Technologies
Infineon Technologies
MOSFET N-CH 150V 35A TO220AB
$2.42
Available to order
Reference Price (USD)
1+
$2.20000
10+
$1.99100
100+
$1.62250
500+
$1.28762
1,000+
$1.08671
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your electronic systems with IRFB5615PBF, a high-quality Transistors - FETs, MOSFETs - Single from Infineon Technologies. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, IRFB5615PBF provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150 V
- Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 39mOhm @ 21A, 10V
- Vgs(th) (Max) @ Id: 5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 144W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
Related Products
Infineon Technologies
AUIRFS3006-7TRL
Diodes Incorporated
DMT6030LFDF-7
onsemi
NVMFS5A140PLZWFT1G
Nexperia USA Inc.
PSMN1R9-40YSDX
Infineon Technologies
IPI80N04S3-03
NXP USA Inc.
BUK9509-75A,127
Diodes Incorporated
DMP2002UPS-13
onsemi
NTMFS0D9N03CGT1G
Infineon Technologies
IPP026N10NF2SAKMA1
onsemi