IRF8010STRLPBF
Infineon Technologies
Infineon Technologies
MOSFET N-CH 100V 80A D2PAK
$2.70
Available to order
Reference Price (USD)
800+
$1.21908
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience the power of IRF8010STRLPBF, a premium Transistors - FETs, MOSFETs - Single from Infineon Technologies. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, IRF8010STRLPBF is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 15mOhm @ 45A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 3830 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 260W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Related Products
Vishay Siliconix
IRFZ14STRLPBF
Nexperia USA Inc.
PMV88ENEAR
onsemi
MMDF3N02HDR2
onsemi
FDC637BNZ
Vishay Siliconix
SI4800BDY-T1-E3
onsemi
FDMA410NZT
Infineon Technologies
IRFP4137PBF
PN Junction Semiconductor
P3M12080K4
Vishay Siliconix
SI4800BDY-T1-GE3
onsemi