IRF6894MTRPBF
Infineon Technologies
Infineon Technologies
IRF6894 - 12V-300V N-CHANNEL POW
$0.96
Available to order
Reference Price (USD)
1+
$0.96000
500+
$0.9504
1000+
$0.9408
1500+
$0.9312
2000+
$0.9216
2500+
$0.912
Exquisite packaging
Discount
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Upgrade your electronic designs with IRF6894MTRPBF by Infineon Technologies, a top-tier choice in Discrete Semiconductor Products. Specifically crafted for Transistors - FETs, MOSFETs - Single applications, this product offers superior power handling and energy efficiency. Key features include high voltage tolerance, minimal power loss, and robust durability, making it perfect for switching and amplification tasks. Whether for industrial machinery, renewable energy systems, or portable devices, IRF6894MTRPBF ensures reliable operation. Ready to integrate this component into your project? Submit an inquiry now for pricing and availability!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25 V
- Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 160A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 1.3mOhm @ 33A, 10V
- Vgs(th) (Max) @ Id: 2.1V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 4.5 V
- Vgs (Max): ±16V
- Input Capacitance (Ciss) (Max) @ Vds: 4160 pF @ 13 V
- FET Feature: Schottky Diode (Body)
- Power Dissipation (Max): 2.1W (Ta), 54W (Tc)
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DIRECTFET™ MX
- Package / Case: DirectFET™ Isometric MX
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