IRF3315STRR
Infineon Technologies
Infineon Technologies
MOSFET N-CH 150V 21A D2PAK
$0.00
Available to order
Reference Price (USD)
800+
$2.08395
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
IRF3315STRR by Infineon Technologies is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, IRF3315STRR ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150 V
- Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 82mOhm @ 12A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 94W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Related Products
Infineon Technologies
IRFS3006PBF
Diodes Incorporated
ZVN0545ASTOA
STMicroelectronics
STD40NF3LLT4
IXYS
IXTH44N30T
Vishay Siliconix
2N7002E
Infineon Technologies
IRFR5305TRRPBF
Infineon Technologies
SPD22N08S2L-50
NXP USA Inc.
BUK7C3R8-80EJ
Alpha & Omega Semiconductor Inc.
AON7702
Infineon Technologies