IRF100P219XKMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 100V TO247AC
$0.00
Available to order
Reference Price (USD)
1+
$8.08000
10+
$7.32900
400+
$5.66500
800+
$4.84825
1,200+
$4.60625
Exquisite packaging
Discount
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Boost your electronic applications with IRF100P219XKMA1, a reliable Transistors - FETs, MOSFETs - Single by Infineon Technologies. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, IRF100P219XKMA1 meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 203A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id: 3.8V @ 278µA
- Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 12020 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 341W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247AC
- Package / Case: TO-247-3
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