IRF100P218XKMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 100V 209A TO247AC
$0.00
Available to order
Reference Price (USD)
1+
$9.20000
10+
$8.34200
400+
$6.44780
800+
$5.51819
1,200+
$5.24275
Exquisite packaging
Discount
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Optimize your electronic systems with IRF100P218XKMA1, a high-quality Transistors - FETs, MOSFETs - Single from Infineon Technologies. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, IRF100P218XKMA1 provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 209A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 1.28mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id: 3.8V @ 278µA
- Gate Charge (Qg) (Max) @ Vgs: 555 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 25000 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 556W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247AC
- Package / Case: TO-247-3
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