IRD3CH101DB6
Infineon Technologies
Infineon Technologies
DIODE GEN PURP 1.2KV 200A DIE
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Experience next-level performance with Infineon Technologies's IRD3CH101DB6 Single Rectifier Diodes, designed for high-power applications. These diodes provide excellent rectification efficiency, making them suitable for solar panels, electric vehicles, and UPS systems. Key features include high current density, fast recovery, and superior thermal management. Infineon Technologies stands by its products with rigorous testing and quality assurance. Need assistance? Contact our sales team now!
Specifications
- Product Status: Obsolete
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1200 V
- Current - Average Rectified (Io): 200A
- Voltage - Forward (Vf) (Max) @ If: 2.7 V @ 200 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 360 ns
- Current - Reverse Leakage @ Vr: 3.6 µA @ 1200 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
- Operating Temperature - Junction: -40°C ~ 175°C
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