IPW60R060P7XKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 600V 48A TO247-3
$8.55
Available to order
Reference Price (USD)
1+
$8.14000
10+
$7.32100
240+
$6.08804
720+
$5.01983
1,200+
$4.30770
Exquisite packaging
Discount
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Boost your electronic applications with IPW60R060P7XKSA1, a reliable Transistors - FETs, MOSFETs - Single by Infineon Technologies. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, IPW60R060P7XKSA1 meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 60mOhm @ 15.9A, 10V
- Vgs(th) (Max) @ Id: 4V @ 800µA
- Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2895 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 164W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-3
- Package / Case: TO-247-3
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