IPU50R3K0CEBKMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 500V 1.7A TO251-3
$0.11
Available to order
Reference Price (USD)
1+
$0.11000
500+
$0.1089
1000+
$0.1078
1500+
$0.1067
2000+
$0.1056
2500+
$0.1045
Exquisite packaging
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Enhance your circuit performance with IPU50R3K0CEBKMA1, a premium Transistors - FETs, MOSFETs - Single from Infineon Technologies. As part of the Discrete Semiconductor Products lineup, this MOSFET excels in delivering high-speed switching and low power consumption. Its advanced design reduces heat generation and improves efficiency, suitable for power supplies, motor controls, and LED lighting. Trust IPU50R3K0CEBKMA1 for consistent quality and long-lasting performance. For bulk orders or custom specifications, reach out to our sales team today!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500 V
- Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 13V
- Rds On (Max) @ Id, Vgs: 3Ohm @ 400mA, 13V
- Vgs(th) (Max) @ Id: 3.5V @ 30µA
- Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 84 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 18W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO251-3
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
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