IPTG025N10NM5ATMA1
Infineon Technologies
Infineon Technologies
TRENCH >=100V PG-HSOG-8
$3.34
Available to order
Reference Price (USD)
1+
$3.33600
500+
$3.30264
1000+
$3.26928
1500+
$3.23592
2000+
$3.20256
2500+
$3.1692
Exquisite packaging
Discount
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Discover high-performance IPTG025N10NM5ATMA1 from Infineon Technologies, a leading solution in the Discrete Semiconductor Products category. Our Transistors - FETs, MOSFETs - Single are designed for efficiency and reliability, making them ideal for various electronic applications. These components feature low on-resistance, fast switching speeds, and excellent thermal performance, ensuring optimal functionality in power management and amplification circuits. Commonly used in automotive, industrial, and consumer electronics, IPTG025N10NM5ATMA1 delivers consistent performance under demanding conditions. Interested in learning more? Contact us today for a detailed quote and technical support!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 206A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 2.5mOhm @ 150A 10V
- Vgs(th) (Max) @ Id: 3.8V @ 158µA
- Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 214W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-HSOG-8-1
- Package / Case: 8-PowerSFN
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