IPT015N10N5ATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 100V 300A 8HSOF
$8.14
Available to order
Reference Price (USD)
2,000+
$4.09524
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover IPT015N10N5ATMA1, a versatile Transistors - FETs, MOSFETs - Single solution from Infineon Technologies, a trusted name in Discrete Semiconductor Products. This MOSFET combines high power density with low on-resistance, perfect for compact and energy-efficient designs. Applications include solar inverters, electric vehicles, and wearable technology. Interested in this innovative component? Send us your inquiry now for more information!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 1.5mOhm @ 150A, 10V
- Vgs(th) (Max) @ Id: 3.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 211 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 375W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-HSOF-8-1
- Package / Case: 8-PowerSFN
Related Products
Rectron USA
RM3404
Alpha & Omega Semiconductor Inc.
AOD2910E
onsemi
NVMFS6H824NLWFT1G
Infineon Technologies
IRF1010NPBF
IXYS
IXTH60N20X4
STMicroelectronics
STD13N60M6
IXYS
IXTP120N04T2
Rectron USA
RM30P30D3
STMicroelectronics
STW46NF30
Vishay Siliconix