IPP77N06S212AKSA2
Infineon Technologies
Infineon Technologies
MOSFET N-CH 55V 77A TO220-3
$1.80
Available to order
Reference Price (USD)
1+
$1.86000
10+
$1.64500
100+
$1.30010
500+
$1.00822
1,000+
$0.79596
Exquisite packaging
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose IPP77N06S212AKSA2 by Infineon Technologies. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with IPP77N06S212AKSA2 inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55 V
- Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 12mOhm @ 38A, 10V
- Vgs(th) (Max) @ Id: 4V @ 93µA
- Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 158W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3-1
- Package / Case: TO-220-3
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