IPP60R060C7XKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 600V 35A TO220-3
$10.87
Available to order
Reference Price (USD)
500+
$5.09522
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Infineon Technologies presents IPP60R060C7XKSA1, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, IPP60R060C7XKSA1 delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 60mOhm @ 15.9A, 10V
- Vgs(th) (Max) @ Id: 4V @ 800µA
- Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 162W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3
- Package / Case: TO-220-3
Related Products
onsemi
MCH3478-TL-H
IXYS
IXTA20N65X
EPC
EPC2202
Nexperia USA Inc.
PMV33UPE,215
Vishay Siliconix
SQM50P08-25L_GE3
Diodes Incorporated
DMT32M5LPSW-13
Infineon Technologies
IRF1404PBF
Nexperia USA Inc.
BUK9GTHP-55PJTR,51
Vishay Siliconix
IRF730PBF
Fairchild Semiconductor