IPP055N03LGXKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 30V 50A TO220-3
$1.41
Available to order
Reference Price (USD)
1+
$1.19000
10+
$1.05700
100+
$0.84680
500+
$0.66918
1,000+
$0.54005
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover high-performance IPP055N03LGXKSA1 from Infineon Technologies, a leading solution in the Discrete Semiconductor Products category. Our Transistors - FETs, MOSFETs - Single are designed for efficiency and reliability, making them ideal for various electronic applications. These components feature low on-resistance, fast switching speeds, and excellent thermal performance, ensuring optimal functionality in power management and amplification circuits. Commonly used in automotive, industrial, and consumer electronics, IPP055N03LGXKSA1 delivers consistent performance under demanding conditions. Interested in learning more? Contact us today for a detailed quote and technical support!
Specifications
- Product Status: Not For New Designs
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 5.5mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 68W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3
- Package / Case: TO-220-3
Related Products
NXP Semiconductors
PMZ290UNEYL
Infineon Technologies
IPD04N03LB G
IXYS
IXFQ50N50P3
Infineon Technologies
IPA037N08N3GXKSA1
Infineon Technologies
BSC016N06NSATMA1
NXP Semiconductors
BUK7107-55AIE,118
Texas Instruments
CSD19506KCS
Vishay Siliconix
SIHP14N50D-E3
Vishay Siliconix
SI2312BDS-T1-GE3
Infineon Technologies