IPP052N08N5AKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 80V 80A TO220-3
$2.93
Available to order
Reference Price (USD)
1+
$2.56000
10+
$2.31600
100+
$1.86070
500+
$1.44722
1,000+
$1.19912
Exquisite packaging
Discount
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Boost your electronic applications with IPP052N08N5AKSA1, a reliable Transistors - FETs, MOSFETs - Single by Infineon Technologies. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, IPP052N08N5AKSA1 meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 5.2mOhm @ 80A, 10V
- Vgs(th) (Max) @ Id: 3.8V @ 66µA
- Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 40 V
- FET Feature: -
- Power Dissipation (Max): 125W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3
- Package / Case: TO-220-3
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Infineon Technologies