IPP040N08NF2SAKMA1
Infineon Technologies
Infineon Technologies
TRENCH 40<-<100V
$2.83
Available to order
Reference Price (USD)
1+
$2.83000
500+
$2.8017
1000+
$2.7734
1500+
$2.7451
2000+
$2.7168
2500+
$2.6885
Exquisite packaging
Discount
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Infineon Technologies presents IPP040N08NF2SAKMA1, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, IPP040N08NF2SAKMA1 delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 115A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 4mOhm @ 80A, 10V
- Vgs(th) (Max) @ Id: 3.8V @ 85µA
- Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 40 V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 150W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3
- Package / Case: TO-220-3
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