IPP023NE7N3GXKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 75V 120A TO220-3
$7.61
Available to order
Reference Price (USD)
1+
$6.44000
10+
$5.79700
100+
$4.82060
500+
$3.97474
1,000+
$3.41086
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your electronic systems with IPP023NE7N3GXKSA1, a high-quality Transistors - FETs, MOSFETs - Single from Infineon Technologies. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, IPP023NE7N3GXKSA1 provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 75 V
- Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 2.3mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id: 3.8V @ 273µA
- Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 14400 pF @ 37.5 V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3-1
- Package / Case: TO-220-3
Related Products
Infineon Technologies
IPB65R065C7ATMA2
Vishay Siliconix
SI4101DY-T1-GE3
onsemi
NTLJS17D0P03P8ZTAG
Alpha & Omega Semiconductor Inc.
AOT412
Diodes Incorporated
DMP3056LDMQ-7
STMicroelectronics
STP26N60M2
onsemi
FDPF18N20FT
Microchip Technology
APT6021BFLLG
Diodes Incorporated
ZXMP3A17E6TA
Microchip Technology