IPN70R450P7SATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 700V 10A SOT223
$1.15
Available to order
Reference Price (USD)
3,000+
$0.41180
6,000+
$0.38642
15,000+
$0.37373
30,000+
$0.36681
Exquisite packaging
Discount
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Experience the power of IPN70R450P7SATMA1, a premium Transistors - FETs, MOSFETs - Single from Infineon Technologies. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, IPN70R450P7SATMA1 is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 700 V
- Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 450mOhm @ 2.3A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 120µA
- Gate Charge (Qg) (Max) @ Vgs: 13.1 nC @ 10 V
- Vgs (Max): ±16V
- Input Capacitance (Ciss) (Max) @ Vds: 424 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 7.1W (Tc)
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-SOT223
- Package / Case: TO-261-4, TO-261AA
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