IPN50R2K0CEATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 500V 3.6A SOT223
$0.65
Available to order
Reference Price (USD)
3,000+
$0.17905
6,000+
$0.16922
15,000+
$0.15940
30,000+
$0.14761
75,000+
$0.14270
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your electronic designs with IPN50R2K0CEATMA1 by Infineon Technologies, a top-tier choice in Discrete Semiconductor Products. Specifically crafted for Transistors - FETs, MOSFETs - Single applications, this product offers superior power handling and energy efficiency. Key features include high voltage tolerance, minimal power loss, and robust durability, making it perfect for switching and amplification tasks. Whether for industrial machinery, renewable energy systems, or portable devices, IPN50R2K0CEATMA1 ensures reliable operation. Ready to integrate this component into your project? Submit an inquiry now for pricing and availability!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500 V
- Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 13V
- Rds On (Max) @ Id, Vgs: 2Ohm @ 600mA, 13V
- Vgs(th) (Max) @ Id: 3.5V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 124 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 5W (Tc)
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-SOT223-3
- Package / Case: TO-261-4, TO-261AA
Related Products
Infineon Technologies
IAUS300N10S5N014ATMA1
Vishay Siliconix
SQJA66EP-T1_GE3
Diodes Incorporated
DMN2310UFD-7
IXYS
IXFT15N100Q3-TRL
Vishay Siliconix
SQJ140EP-T1_GE3
Renesas
HAT2203C-EL-E
Infineon Technologies
BSC882N03LS G
Infineon Technologies
IPI45N06S4L08AKSA3
Vishay Siliconix
SIHFR320TR-GE3
Diodes Incorporated