IPL60R065P7AUMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 650V 41A 4VSON
$9.39
Available to order
Reference Price (USD)
3,000+
$4.23437
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Infineon Technologies presents IPL60R065P7AUMA1, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, IPL60R065P7AUMA1 delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 65mOhm @ 15.9A, 10V
- Vgs(th) (Max) @ Id: 4V @ 800µA
- Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2895 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 201W (Tc)
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-VSON-4
- Package / Case: 4-PowerTSFN
Related Products
Nexperia USA Inc.
PSMN1R4-40YLD,115-NEX
Micro Commercial Co
MCAC25P10YHE3-TP
IXYS
IXTA48P05T
Infineon Technologies
IRL7472L1TRPBF
Toshiba Semiconductor and Storage
TW107N65C,S1F
Goford Semiconductor
G12P10K
Infineon Technologies
IPP90R800C3XKSA2
onsemi
NVMYS2D4N04CTWG
Taiwan Semiconductor Corporation
TSM60NB190CM2 RNG
NXP USA Inc.