IPI65R150CFDXKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 650V 22.4A TO262-3
$1.47
Available to order
Reference Price (USD)
1+
$1.47000
500+
$1.4553
1000+
$1.4406
1500+
$1.4259
2000+
$1.4112
2500+
$1.3965
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose IPI65R150CFDXKSA1 by Infineon Technologies. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with IPI65R150CFDXKSA1 inquire now for more details!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 22.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 150mOhm @ 9.3A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 900µA
- Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2340 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 195.3W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO262-3-1
- Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Related Products
Diodes Incorporated
ZVN3310ASTZ
Renesas Electronics America Inc
UPA2719GR-E2-AT
Nexperia USA Inc.
PSMN011-80YS,115
Fairchild Semiconductor
FQI47P06TU
Alpha & Omega Semiconductor Inc.
AOT66916L
Vishay Siliconix
SUM40014M-GE3
Diodes Incorporated
DMT12H065LFDF-7
onsemi
NTD95N02RT4
Infineon Technologies
AUIRFZ44NS
Infineon Technologies