IPI60R199CPXKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 600V 16A TO262-3
$3.30
Available to order
Reference Price (USD)
500+
$2.36814
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your electronic systems with IPI60R199CPXKSA1, a high-quality Transistors - FETs, MOSFETs - Single from Infineon Technologies. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, IPI60R199CPXKSA1 provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 199mOhm @ 9.9A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 660µA
- Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1520 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 139W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO262-3
- Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Related Products
onsemi
2SK3816-DL-1E
onsemi
NTTFS4C25NTAG
IXYS
IXFH15N60
Infineon Technologies
BSZ036NE2LSATMA1
Vishay Siliconix
SQJ152EP-T1_GE3
Rohm Semiconductor
2SK3018T106
STMicroelectronics
STB80NF55-08AG
NXP Semiconductors
PSMN009-100P,127
Infineon Technologies
IPA65R420CFDXKSA1
STMicroelectronics