IPI120P04P404AKSA1
Infineon Technologies
Infineon Technologies
MOSFET P-CH 40V 120A TO262-3
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Infineon Technologies presents IPI120P04P404AKSA1, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, IPI120P04P404AKSA1 delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Obsolete
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 3.8mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id: 4V @ 340µA
- Gate Charge (Qg) (Max) @ Vgs: 205 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 14790 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 136W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO262-3-1
- Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Related Products
Infineon Technologies
IRFR2905ZTR
Vishay Siliconix
SI4829DY-T1-E3
Taiwan Semiconductor Corporation
TSM8N70CI C0G
onsemi
FDC633N_F095
Infineon Technologies
IRLL2705PBF
Vishay Siliconix
SI4412ADY-T1-GE3
Vishay Siliconix
SUP60N06-12P-GE3
Vishay Siliconix
SI7388DP-T1-E3
Infineon Technologies
IPI024N06N3GHKSA1
Infineon Technologies