IPI100N06S3L-03
Infineon Technologies
Infineon Technologies
MOSFET N-CH 55V 100A TO262-3
$1.16
Available to order
Reference Price (USD)
1+
$1.16000
500+
$1.1484
1000+
$1.1368
1500+
$1.1252
2000+
$1.1136
2500+
$1.102
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Boost your electronic applications with IPI100N06S3L-03, a reliable Transistors - FETs, MOSFETs - Single by Infineon Technologies. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, IPI100N06S3L-03 meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55 V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
- Rds On (Max) @ Id, Vgs: 3mOhm @ 80A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 230µA
- Gate Charge (Qg) (Max) @ Vgs: 550 nC @ 10 V
- Vgs (Max): ±16V
- Input Capacitance (Ciss) (Max) @ Vds: 26240 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO262-3
- Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Related Products
NXP USA Inc.
BUK7506-75B,127
Infineon Technologies
SPB02N60S5ATMA1
Nexperia USA Inc.
PMV130ENEAR
Vishay Siliconix
SI2303CDS-T1-E3
IXYS Integrated Circuits Division
CPC3710CTR
Fairchild Semiconductor
FDD6035AL
onsemi
FDD4243-F085
Diodes Incorporated
DMP4065S-13
STMicroelectronics
STH170N8F7-2
IXYS