IPI076N15N5AKSA1
Infineon Technologies
Infineon Technologies
MV POWER MOS
$6.45
Available to order
Reference Price (USD)
1+
$4.94000
10+
$4.40900
100+
$3.61570
500+
$2.92780
1,000+
$2.46924
Exquisite packaging
Discount
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Enhance your circuit performance with IPI076N15N5AKSA1, a premium Transistors - FETs, MOSFETs - Single from Infineon Technologies. As part of the Discrete Semiconductor Products lineup, this MOSFET excels in delivering high-speed switching and low power consumption. Its advanced design reduces heat generation and improves efficiency, suitable for power supplies, motor controls, and LED lighting. Trust IPI076N15N5AKSA1 for consistent quality and long-lasting performance. For bulk orders or custom specifications, reach out to our sales team today!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150 V
- Current - Continuous Drain (Id) @ 25°C: 112A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
- Rds On (Max) @ Id, Vgs: 7.6mOhm @ 56A, 10V
- Vgs(th) (Max) @ Id: 4.6V @ 160µA
- Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 75 V
- FET Feature: -
- Power Dissipation (Max): 214W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO262-3
- Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
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