IPG20N10S4L35ATMA1
Infineon Technologies
Infineon Technologies
MOSFET 2N-CH 8TDSON
$1.49
Available to order
Reference Price (USD)
5,000+
$0.47226
10,000+
$0.45450
Exquisite packaging
Discount
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The IPG20N10S4L35ATMA1 from Infineon Technologies is a premium option in the Discrete Semiconductor Products category, specializing in Transistors - FETs, MOSFETs - Arrays. With advanced features such as high-frequency operation, low leakage current, and excellent ESD protection, these components are perfect for demanding electronic applications. Whether you re working on telecommunications, computing, or medical devices, IPG20N10S4L35ATMA1 offers the reliability you need. Contact us now to discuss how we can support your project requirements with Infineon Technologies s cutting-edge solutions.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 20A
- Rds On (Max) @ Id, Vgs: 35mOhm @ 17A, 10V
- Vgs(th) (Max) @ Id: 2.1V @ 16µA
- Gate Charge (Qg) (Max) @ Vgs: 17.4nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1105pF @ 25V
- Power - Max: 43W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerVDFN
- Supplier Device Package: PG-TDSON-8-4
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