IPG20N06S4L11ATMA1
Infineon Technologies
Infineon Technologies
MOSFET 2N-CH 8TDSON
$1.94
Available to order
Reference Price (USD)
5,000+
$0.92378
Exquisite packaging
Discount
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Boost your project s performance with Infineon Technologies s IPG20N06S4L11ATMA1, a standout in the Discrete Semiconductor Products category for Transistors - FETs, MOSFETs - Arrays. These components offer superior features such as high efficiency, low noise, and extended lifespan, making them suitable for a variety of advanced applications. From IoT devices to energy-efficient systems, IPG20N06S4L11ATMA1 provides the reliability you need. Don t wait reach out to us today for more information and to request a sample of IPG20N06S4L11ATMA1.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 20A
- Rds On (Max) @ Id, Vgs: 11.2mOhm @ 17A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 28µA
- Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4020pF @ 25V
- Power - Max: 65W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerVDFN
- Supplier Device Package: PG-TDSON-8-4
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