IPG20N06S4L11AATMA1
Infineon Technologies
Infineon Technologies
MOSFET 2N-CH 8TDSON
$1.12
Available to order
Reference Price (USD)
5,000+
$0.95281
Exquisite packaging
Discount
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Enhance your electronic applications with Infineon Technologies s IPG20N06S4L11AATMA1, a leading product in the Discrete Semiconductor Products category for Transistors - FETs, MOSFETs - Arrays. These components are known for their high-speed performance, low energy consumption, and robust design. Perfect for use in switching regulators, audio systems, and communication devices. Discover the benefits of IPG20N06S4L11AATMA1 today get in touch with us for a detailed quote and technical support.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 20A
- Rds On (Max) @ Id, Vgs: 11.2mOhm @ 17A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 28µA
- Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4020pF @ 25V
- Power - Max: 65W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount, Wettable Flank
- Package / Case: 8-PowerVDFN
- Supplier Device Package: PG-TDSON-8-10
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