IPG20N06S415ATMA1
Infineon Technologies
Infineon Technologies
MOSFET 2N-CH 60V 20A 8TDSON
$0.00
Available to order
Reference Price (USD)
5,000+
$0.52881
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The IPG20N06S415ATMA1 by Infineon Technologies is a standout in the Discrete Semiconductor Products category, specifically for Transistors - FETs, MOSFETs - Arrays. Engineered for excellence, these components offer unmatched reliability and performance. Features such as high voltage tolerance, low gate charge, and superior thermal management make them a preferred choice. Applications range from industrial automation to consumer electronics. Don t miss out on the opportunity to integrate IPG20N06S415ATMA1 into your systems contact us for more details and pricing.
Specifications
- Product Status: Discontinued at Digi-Key
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 20A
- Rds On (Max) @ Id, Vgs: 15.5mOhm @ 17A, 10V
- Vgs(th) (Max) @ Id: 4V @ 20µA
- Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2260pF @ 25V
- Power - Max: 50W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerVDFN
- Supplier Device Package: PG-TDSON-8-4
Related Products
Infineon Technologies
IRF7756
Infineon Technologies
BSO203P
Infineon Technologies
BSO204PNTMA1
General Electric
GE17045EEA3
Diodes Incorporated
DMC1029UFDB-7
Vishay Siliconix
SI4818DY-T1-GE3
Infineon Technologies
IRF7103Q
onsemi
MMDF2N02ER2G
Vishay Siliconix
SI5905BDC-T1-GE3
Infineon Technologies