IPDQ60R010S7AXTMA1
Infineon Technologies
Infineon Technologies
AUTOMOTIVE PG-HDSOP-22
$40.08
Available to order
Reference Price (USD)
1+
$40.08000
500+
$39.6792
1000+
$39.2784
1500+
$38.8776
2000+
$38.4768
2500+
$38.076
Exquisite packaging
Discount
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IPDQ60R010S7AXTMA1 by Infineon Technologies is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, IPDQ60R010S7AXTMA1 ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 12V
- Rds On (Max) @ Id, Vgs: 10mOhm @ 50A, 12V
- Vgs(th) (Max) @ Id: 4.5V @ 3.08mA
- Gate Charge (Qg) (Max) @ Vgs: 318 nC @ 12 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 11987 pF @ 300 V
- FET Feature: -
- Power Dissipation (Max): 694W (Tc)
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-HDSOP-22-1
- Package / Case: 22-PowerBSOP Module
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