IPDD60R190G7XTMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 600V 13A HDSOP-10
$3.76
Available to order
Reference Price (USD)
1,700+
$1.48175
3,400+
$1.37956
5,100+
$1.32847
Exquisite packaging
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Discover IPDD60R190G7XTMA1, a versatile Transistors - FETs, MOSFETs - Single solution from Infineon Technologies, a trusted name in Discrete Semiconductor Products. This MOSFET combines high power density with low on-resistance, perfect for compact and energy-efficient designs. Applications include solar inverters, electric vehicles, and wearable technology. Interested in this innovative component? Send us your inquiry now for more information!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 190mOhm @ 4.2A, 10V
- Vgs(th) (Max) @ Id: 4V @ 210µA
- Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 718 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 76W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-HDSOP-10-1
- Package / Case: 10-PowerSOP Module
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