IPD90N04S4L04ATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 40V 90A TO252-3
$1.52
Available to order
Reference Price (USD)
2,500+
$0.43798
5,000+
$0.41608
12,500+
$0.40044
25,000+
$0.39816
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your electronic designs with IPD90N04S4L04ATMA1 by Infineon Technologies, a top-tier choice in Discrete Semiconductor Products. Specifically crafted for Transistors - FETs, MOSFETs - Single applications, this product offers superior power handling and energy efficiency. Key features include high voltage tolerance, minimal power loss, and robust durability, making it perfect for switching and amplification tasks. Whether for industrial machinery, renewable energy systems, or portable devices, IPD90N04S4L04ATMA1 ensures reliable operation. Ready to integrate this component into your project? Submit an inquiry now for pricing and availability!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 3.8mOhm @ 90A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 35µA
- Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
- Vgs (Max): +20V, -16V
- Input Capacitance (Ciss) (Max) @ Vds: 4690 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 71W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO252-3-313
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
Rohm Semiconductor
SCT3080KLHRC11
NXP USA Inc.
BUK7510-100B,127
Fairchild Semiconductor
FDS5692Z
Fairchild Semiconductor
NDB4060L
onsemi
NVMFS5C456NLAFT3G
Vishay Siliconix
SUP90142E-GE3
Fairchild Semiconductor
FQU20N06TU
Vishay Siliconix
IRF740ASTRLPBF
Alpha & Omega Semiconductor Inc.
AON6312
Vishay Siliconix