IPD650P06NMATMA1
Infineon Technologies
Infineon Technologies
MOSFET P-CH 60V 22A TO252-3
$1.93
Available to order
Reference Price (USD)
1+
$1.93000
500+
$1.9107
1000+
$1.8914
1500+
$1.8721
2000+
$1.8528
2500+
$1.8335
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Boost your electronic applications with IPD650P06NMATMA1, a reliable Transistors - FETs, MOSFETs - Single by Infineon Technologies. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, IPD650P06NMATMA1 meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 65mOhm @ 22A, 10V
- Vgs(th) (Max) @ Id: 4V @ 1.04mA
- Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 83W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO252-3-313
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
NTE Electronics, Inc
NTE2392
IXYS
IXTB62N50L
Toshiba Semiconductor and Storage
TK560A65Y,S4X
Microchip Technology
APT28M120L
IXYS
IXTP05N100M
Infineon Technologies
AUIRLR2703TRL
onsemi
FQPF8N60CFT
Renesas Electronics America Inc
2SK2737-E
Vishay Siliconix
SIS427EDN-T1-GE3
Vishay Siliconix