IPD60R1K0CEAUMA1
Infineon Technologies
Infineon Technologies
CONSUMER
$1.00
Available to order
Reference Price (USD)
2,500+
$0.27817
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover IPD60R1K0CEAUMA1, a versatile Transistors - FETs, MOSFETs - Single solution from Infineon Technologies, a trusted name in Discrete Semiconductor Products. This MOSFET combines high power density with low on-resistance, perfect for compact and energy-efficient designs. Applications include solar inverters, electric vehicles, and wearable technology. Interested in this innovative component? Send us your inquiry now for more information!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 1Ohm @ 1.5A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 130µA
- Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 61W (Tc)
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO252-3-344
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
Toshiba Semiconductor and Storage
TK9J90E,S1E
Renesas Electronics America Inc
2SK2480-AZ
Infineon Technologies
IRFZ44NLPBF
Nexperia USA Inc.
PMV160UPVL
Diodes Incorporated
DMT6017LFDF-13
Infineon Technologies
IPAW60R600P7SE8228XKSA1
Infineon Technologies
BSP149H6327XTSA1
onsemi
NTP6410ANG
Rohm Semiconductor
RQ1A070ZPTR
IXYS