IPD50R380CEAUMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 500V 14.1A TO252-3
$1.43
Available to order
Reference Price (USD)
2,500+
$0.49046
5,000+
$0.46863
12,500+
$0.45303
25,000+
$0.45077
Exquisite packaging
Discount
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose IPD50R380CEAUMA1 by Infineon Technologies. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with IPD50R380CEAUMA1 inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500 V
- Current - Continuous Drain (Id) @ 25°C: 14.1A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 13V
- Rds On (Max) @ Id, Vgs: 380mOhm @ 3.2A, 13V
- Vgs(th) (Max) @ Id: 3.5V @ 260µA
- Gate Charge (Qg) (Max) @ Vgs: 24.8 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 584 pF @ 100 V
- FET Feature: Super Junction
- Power Dissipation (Max): 98W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO252-3
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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