IPD50R280CEBTMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 500V 13A TO252-3
$0.00
Available to order
Reference Price (USD)
2,500+
$0.61460
5,000+
$0.58387
12,500+
$0.56192
25,000+
$0.54436
62,500+
$0.52680
Exquisite packaging
Discount
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Boost your electronic applications with IPD50R280CEBTMA1, a reliable Transistors - FETs, MOSFETs - Single by Infineon Technologies. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, IPD50R280CEBTMA1 meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Discontinued at Digi-Key
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500 V
- Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 13V
- Rds On (Max) @ Id, Vgs: 280mOhm @ 4.2A, 13V
- Vgs(th) (Max) @ Id: 3.5V @ 350µA
- Gate Charge (Qg) (Max) @ Vgs: 32.6 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 773 pF @ 100 V
- FET Feature: Super Junction
- Power Dissipation (Max): 92W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO252-3-11
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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