IPD50P04P4L11ATMA2
Infineon Technologies
Infineon Technologies
MOSFET P-CH 40V 50A TO252-3
$1.81
Available to order
Reference Price (USD)
1+
$1.81000
500+
$1.7919
1000+
$1.7738
1500+
$1.7557
2000+
$1.7376
2500+
$1.7195
Exquisite packaging
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Experience the power of IPD50P04P4L11ATMA2, a premium Transistors - FETs, MOSFETs - Single from Infineon Technologies. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, IPD50P04P4L11ATMA2 is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 10.6mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 85µA
- Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
- Vgs (Max): +5V, -16V
- Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 58W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO252-3-313
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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