IPD135N03LGBTMA1
Infineon Technologies
Infineon Technologies
LV POWER MOS
$0.37
Available to order
Reference Price (USD)
2,500+
$0.29125
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your electronic systems with IPD135N03LGBTMA1, a high-quality Transistors - FETs, MOSFETs - Single from Infineon Technologies. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, IPD135N03LGBTMA1 provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Not For New Designs
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): -
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: -
- Power Dissipation (Max): -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
Related Products
onsemi
MMDF7N02ZR2
STMicroelectronics
STU2N105K5
Renesas Electronics America Inc
3SK317ZR-TL-E
Infineon Technologies
IRLTS6342TRPBF
Diodes Incorporated
ZXMN3A01FTA
IXYS
IXTA3N100P
Renesas Electronics America Inc
RJK0352DSP-00#J0
Toshiba Semiconductor and Storage
SSM3J377R,LXHF
Diodes Incorporated
ZXMN6A07FQTA
Panjit International Inc.